| Description | Fujitsu Transistor 2SC3046 / C3046 Datasheet Silicon NPN Transistor 2SC3046 / C3046 450V/10A DATASHEET OEM – Fujitsu Source: Fujitsu Databook 1983 Datasheet Rev. 1.3 – 04/19 – data without warranty / liability Fujitsu Transistor 2SC3046 / C3046 Datasheet Datasheet Rev. 1.3 – 04/19 – data w... |
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| Datasheet |
 C3046 Datasheet - 1.91MB |
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 Intronice |
MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE are monolithic devices The IntronicsC300/400 Series that accurately corrcct for gcometricor focus clistortion providcs i n C R T d i s p l a v sT . h e C 3 0 0( l 6 p i n D I P ) s e r i e s firll facc geornetry wideband.accurate or focuscorrecTheseunits connect tion with fcw externalcon-rponents. bctweenthe horizontaland verticalinputs ancltheir cleprovicle flection amplil'icrs. Sinrplcexternaladjustments keystone for corrcctionrnagnitude. horizontal/vertical (24 pin DIP) and curvature synrmetry. The C400 serics a l u l l M i l t e m pl a n g c .55"C to + l l5"C device. is. The principleof operationis basccl on circuitry whicl-r srnoothlysynthesizes a correctionfunction that closcly the cxa... |
 Sanyo |
2SC3000 Ordering number:EN866C Features · FBET series. · High fT and small Cre. NPN Epitaxial Planar Silicon Transistor 2SC3000 HF Amplifier Applications Package Dimensions unit:mm 2003A [2SC3000] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Base-to-Collec... |
 OKI |
Printer User Guide C301/C321/C331/C511/C531/ES5431 User’s Guide PREFACE Every effort has been made to ensure that the information in this document is complete, accurate, and up-to-date. The manufacturer assumes no responsibility for the results of errors beyond its control. The manufacturer also cannot guarantee that changes in software and equipment made by other manufacturers and referred to in this guide will not affect the applicability of the information in it. Mention of software products manufactured by other companies does not necessarily constitute endorsement by the manufacturer. While all reasonable efforts have been made to make this document as accurate and helpful as possible, we make no warrant... |
 CITC |
Trench Schottky Rectifier C30100CT 30A Trench Schottky Rectifier ■ Features • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 ■ Mechanical data • Epoxy : UL94-V0 rated flame retardant. • Case : JEDEC TO-220AB molded plastic body. • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026. • Polarity: As marked. • Mounting Position : Any. • Weight : Approximated 2.25 gram. ■ Maximum ratings and electrical characteristics ■ Outline TO-220AB ØP A F B C Marking code G 123 C EH I D K L M JN ØP A F B C Marking code G 123 EH I D K L M PIN 1 PIN 3 JN PIN 2 symbol A B C D E F G ... |
 Toshiba |
2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit: mm · High gain: |S21e|2 = 12dB (typ.) · Low noise figure: NF = 2.3dB (typ.), f = 1 GHz · High fT: fT = 6.5 GHz Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 20 7 3 30 10 150 125 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Transition frequ... |
 ETC |
2SC3012 ·With TO-3PN package ·Complement to type 2SA1232 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier. PINNING www.DataSheet4U.com 1 2 3 Base PIN DESCRIPTION Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 130 130 5 10 15 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon ... |
 NEC |
UPC301AC www.DataSheet4U.com www.DataSheet4U.com ... |
 MITSUBISHI |
2SC3021 ... |
 SavantIC |
2SC3025 ·With TO-3 package ·High breakdown voltage APPLICATIONS ·High voltage power switching character display horizontal deflection output PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Product Specification 2SC3025 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO Collector-base voltage Open emitter VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector IC Collector current ICP Collector current-peak PC Collector power dissipation Tj Junction temperature Tstg Storage temperature TC=25 VALUE 1500 800 6 5 6 50 150 -45~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Po... |
Sanyo |
2SC3038 Ordering number:EN949B NPN Triple Diffused Planar Silicon Transistor 2SC3038 400V/4A Switching Regulator Applications Features · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3038] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP IB PC Tj PW≤300µs, Duty Cycle≤10% Tc=25˚C 500 400 7 4 8 1.5 1.75 40 150 Storage Tempe... |
ETC |
2SC3039 A www.DataSheet4U.com A www.DataSheet4U.com A www.DataSheet4U.com ... |
SavantIC |
2SC3040 ·With TO-3PN package ·High breakdown voltage (VCBO 500V) ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·400V/8A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Product Specification 2SC3040 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-peak IB Base current PC Collector power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE 500 400 7 ... |
Sanyo |
2SC3040 Ordering number:EN997B NPN Triple Diffused Planar Silicon Transistor 2SC3040 400V/8A Switching Regulator Applications Features · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3040] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation VCBO VCEO VEBO IC ICP IB PC PW≤300µs, Duty Cycle≤10% Tc=25˚C 500 400 7 8 16 3 2.5 80 Junction Temperature Tj 150 Storage Temperature Tstg –... |
 Sanyo Semiconductor Corporation |
2SC3042 Ordering number:EN938B NPN Triple Diffused Planar Silicon Transistor 2SC3042 400V/12A Switching Regulator Applications Features · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3042] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP IB PC Tc=25˚C PW≤300µs, Duty Cycle≤10% 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Conditions Ratings 500 400 7 12 25 4 2.5 100 150 –55 to +150 Unit V V V A A A W W ˚C ˚C www.DataSheet4U.com... |
CITC |
Trench Schottky Rectifier C3045CT 30A Trench Schottky Rectifier ■ Features • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 ■ Mechanical data • Epoxy : UL94-V0 rated flame retardant. • Case : JEDEC TO-220AB molded plastic body. • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026. • Polarity: As marked. • Mounting Position : Any. • Weight : Approximated 2.25 gram. ■ Maximum ratings and electrical characteristics ■ Outline TO-220AB ØP A F B C Marking code G 123 C EH I D K L M JN ØP A F B C Marking code G 123 EH I D K L M PIN 1 PIN 3 JN PIN 2 symbol A B C D E F G H... |
 Kexin |
2SC3052 SMD Type Features Collector current :IC=0.2A Power dissipation :PC=0.15W NPN Transistor 2SC3052 Transistors SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 Unit: mm +0.11.3 -0.1 0.55 0.4 +0.12.4 -0.1 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current power dissipation * Junction temperature Storage temperature * . 0.7 mmx16 cm2 ceramic substrate Symbol VCBO VCEO VEBO IC Pc Tj Tstg Rating 50 50 6 200 150 150 -55 to +150 Unit V V V mA mW 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.collector Electrical Characteristics Ta = 25 Parameter Collector-base breakdown... |