| Description | The A1421, A1422, and A1423 are AC-coupled Hall-effect sensor ICs which include monolithic integrated circuits that switch in response to changing differential magnetic fields created by rotating ring magnets or, when coupled with a magnet, by ferrous targets. This family of devices also includes an... |
| Features |
and Benefits
• Integrated tracking capacitor • Used for sensing motion of ring magnet or ferrous targets • Wide operating temperature range • Operation with magnetic input signal frequency from 20 Hz to 30 kHz • EMI/ESD-resistant • Large effective air gaps • 4.0 to 26.5 V supply operating range • Output compatible with CMOS logic families • Reverse battery protection • Resistant to mechanical and thermal stress • Accurate true zero crossing switchpoint (A1421 only) • High vibration immunity, in running mode (A1423 only) Package: 4 pin SIP (suffix K) Description The A1421, A1422, and A1423 are... |
| Datasheet |
 A1422 Datasheet - 1.17MB |
| Part Number | Description |
|---|---|
 Sanyo |
2SA1402 Ordering number:EN1761B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1402/2SC3596 Ultrahigh-Difinition CRT Display Video Output Applications Applications · Ultrahigh-definition CRT display. · Video output. · Color TV chroma output. · Wide-band amp. Package Dimensions unit:mm 2009B [2SA1402/2SC3596] Features · High fT: fT typ=700MHz. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Complementary pair with the 2SA1402/2SC3596. · Adoption of FBET process. ( ) : 2SA1402 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Co... |
Sanyo |
2SA1403 Ordering number:ENN1762B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1403/2SC3597 Ultrahigh-Definition CRT Display Video Output Applications Applications · Ultrahig-definition CRT display. · Video output. · Color TV chroma output. · Wide-band amp. Features · High fT : fT typ=800MHz. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.9pF (NPN), 4.6pF (PNP). · Complementary pair with the 2SA1403/2SC3597. · Adoption of FBET procss. Package Dimensions unit:mm 2009B [2SA1403/2SC3597] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1403 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Volta... |
Sanyo |
2SA1404 Ordering number:ENN1763B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1404/2SC3598 Ultrahigh-Definition CRT Display Video Output Applications Applictions · Ultrahigh-definition CRT display. · Video output. · Color TV chroma output. · Wide-band amp. Features · High fT : fT typ=500MHz. · High breakdown voltage : VCEO≥120V. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.6pF (NPN), 2.1pF (PNP). · Complementary pair with the 2SA1404/2SC3598. · Adoption of FBET process. ( ) : 2SA1404 Specifications Package Dimensions unit:mm 2009B [2SA1404/2SC3598] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 12 3 2.4 4.8 1.2 1 : Emitter 2 : ... |
Sanyo |
2SA1405 Ordering number:ENN1764B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1405/2SC3599 Ultrahigh-Definition CRT Display Video Output Applications Applications · Ultrahigh-definition CRT display. · Video output. · Color TV chroma output. · Wide-band amp. Features · High fT : fT typ=500MHz. · High breakdown voltage : VCEO≥120V. · Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=2.5pF (NPN), 3.8pF (PNP). · Complementary pair with the 2SA1405/2SC3599. · Adoption of FBET process. ( ) : 2SA1405 Specifications Package Dimensions unit:mm 2009B [2SA1405/2SC3599] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 12 3 2.4 4.8 1.2 1 : Emitter 2 ... |
Sanyo |
2SA1406 Ordering number:ENN1765B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1406/2SC3600 Ultrahigh-Definition CRT Display Video Output Applications Applications · Ultrahigh-definition CRT display. · Video output. · Color TV chroma output. · Wide-band amp. Package Dimensions unit:mm 2009B [2SA1406/2SC3600] 8.0 4.0 2.7 Features · High fT : fT typ=400MHz. · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent HF response : Cre=1.4pF (NPN), 1.7pF (PNP). · Complementary PNP and NPN types. · Adoption of FBET process. ( ) : 2SA1406 Specifications 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 1.2 12 3 2.4 4.8 15.5 0.5 1 : Emitter 2 : Collector 3 : Base SANYO : T... |
 Sanyo Semicon Device |
2SA1407 Ordering number : EN1766D 2SA1407 / 2SC3601 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1407 / 2SC3601 Applications • • • • Ultrahigh-Definition CRT Display Video Output Applications Ultrahigh-definition CRT display. Video output. Color TV chroma output. Wide-band amp. Features • • • • • High fT : fT typ=400MHz. High breakdown voltage : VCEO≥200V. Small reverce transfer capacitance and excellent high frequency characteristics : Cre=2.0pF(NPN), 2.5pF(PNP). Complementary PNP and NPN types. Adoption of FBET process. Specifications ( ) : 2SA1407 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emit... |
 Toshiba Semiconductor |
2SA1408 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1408 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output Applications 2SA1408 Unit: mm • Large collector current and collector power dissipation capability • Recommended for vertical deflection output and sound output applications for line-operated TV. • Complementary to 2SC3621 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage VCEO −150 V Emitter-base voltage VEBO −6 V Collector current IC −1.5 A Base current IB −1.0 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.5 W 10 Junction temp... |
 Philips |
Tetrode ... |
 Actel |
HiRel FPGAs v3.0 HiRel FPGAs Fe a t ur es • Low-Power 0.8µ CMOS Technology 32 0 0D X Fe a t ur es • Highly Predictable Performance with 100% Automatic Placement and Routing • Device Sizes from 1,200 to 20,000 Gates • Up to 6 Fast, Low-Skew Clock Networks • Up to 202 User-Programmable I/O Pins • • • • • • • • • More Than 500 Macro Functions Up to 1,276 Dedicated Flip-Flops I/O Drive to 10 mA Devices Available to DSCC SMD CQFP and CPGA Packaging Nonvolatile, User Programmable Logic Fully Tested Prior to Shipment 100% Military Temperature Tested (–55°C to +125°C) QML Certified Devices • 100 MHz System Logic Integration • Highest Speed FPGA SRAM, up to 2.5 kbits Configurable Dual-Port SRAM • Fast Wide-D... |
 NEC |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR ... |
Sanyo |
2SA1415 Ordering number:ENN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver Applications Features · Adoption of FBET process. · High breakdown voltage (VCEO=160V). · Excellent linearity of hFE and small Cob. · Fast switching speed. · Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1415/2SC3645] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1415 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tem... |
Sanyo |
2SA1416 Ordering number:ENN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Ultrasmall size making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1416 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbo... |
Sanyo |
2SA1417 Ordering number : EN2006D 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions Wh... |
Sanyo |
2SA1418 Ordering number:ENN1788A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1418/2SC3648 High-Voltage Switching, Predriver Applications Applications · Color TV audio output, inverter. Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1418/2SC3648] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1418 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Ba... |
Sanyo |
2SA1419 Ordering number:ENN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide high- density hybrid ICs. Package Dimensions unit:mm 2038A [2SA1419/2SC3649] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1419 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector D... |
 Allegro MicroSystems |
High Precision Hall Effect AC-Coupled Differential Sensor The A1421, A1422, and A1423 are AC-coupled Hall-effect sensor ICs which include monolithic integrated circuits that switch in response to changing differential magnetic fields created by rotating ring magnets or, when coupled with a magnet, by ferrous targets. This family of dev... |