| Description | Ordering number:EN1761B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1402/2SC3596 Ultrahigh-Difinition CRT Display Video Output Applications Applications · Ultrahigh-definition CRT display. · Video output. · Color TV chroma output. · Wide-band amp. Package Dimensions unit:mm 2009B [2SA1402/2SC... |
| Features |
· High fT: fT typ=700MHz. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Complementary pair with the 2SA1402/2SC3596. · Adoption of FBET process. ( ) : 2SA1402 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Co... |
| Datasheet |
 A1402 Datasheet - 116.79KB |
| Part Number | Description |
|---|---|
 Sanyo |
2SA1403 Ordering number:ENN1762B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1403/2SC3597 Ultrahigh-Definition CRT Display Video Output Applications Applications · Ultrahig-definition CRT display. · Video output. · Color TV chroma output. · Wide-band amp. Features · High fT : fT typ=800MHz. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.9pF (NPN), 4.6pF (PNP). · Complementary pair with the 2SA1403/2SC3597. · Adoption of FBET procss. Package Dimensions unit:mm 2009B [2SA1403/2SC3597] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1403 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Volta... |
Sanyo |
2SA1404 Ordering number:ENN1763B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1404/2SC3598 Ultrahigh-Definition CRT Display Video Output Applications Applictions · Ultrahigh-definition CRT display. · Video output. · Color TV chroma output. · Wide-band amp. Features · High fT : fT typ=500MHz. · High breakdown voltage : VCEO≥120V. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.6pF (NPN), 2.1pF (PNP). · Complementary pair with the 2SA1404/2SC3598. · Adoption of FBET process. ( ) : 2SA1404 Specifications Package Dimensions unit:mm 2009B [2SA1404/2SC3598] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 12 3 2.4 4.8 1.2 1 : Emitter 2 : ... |
Sanyo |
2SA1405 Ordering number:ENN1764B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1405/2SC3599 Ultrahigh-Definition CRT Display Video Output Applications Applications · Ultrahigh-definition CRT display. · Video output. · Color TV chroma output. · Wide-band amp. Features · High fT : fT typ=500MHz. · High breakdown voltage : VCEO≥120V. · Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=2.5pF (NPN), 3.8pF (PNP). · Complementary pair with the 2SA1405/2SC3599. · Adoption of FBET process. ( ) : 2SA1405 Specifications Package Dimensions unit:mm 2009B [2SA1405/2SC3599] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 12 3 2.4 4.8 1.2 1 : Emitter 2 ... |
Sanyo |
2SA1406 Ordering number:ENN1765B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1406/2SC3600 Ultrahigh-Definition CRT Display Video Output Applications Applications · Ultrahigh-definition CRT display. · Video output. · Color TV chroma output. · Wide-band amp. Package Dimensions unit:mm 2009B [2SA1406/2SC3600] 8.0 4.0 2.7 Features · High fT : fT typ=400MHz. · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent HF response : Cre=1.4pF (NPN), 1.7pF (PNP). · Complementary PNP and NPN types. · Adoption of FBET process. ( ) : 2SA1406 Specifications 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 1.2 12 3 2.4 4.8 15.5 0.5 1 : Emitter 2 : Collector 3 : Base SANYO : T... |
 Sanyo Semicon Device |
2SA1407 Ordering number : EN1766D 2SA1407 / 2SC3601 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1407 / 2SC3601 Applications • • • • Ultrahigh-Definition CRT Display Video Output Applications Ultrahigh-definition CRT display. Video output. Color TV chroma output. Wide-band amp. Features • • • • • High fT : fT typ=400MHz. High breakdown voltage : VCEO≥200V. Small reverce transfer capacitance and excellent high frequency characteristics : Cre=2.0pF(NPN), 2.5pF(PNP). Complementary PNP and NPN types. Adoption of FBET process. Specifications ( ) : 2SA1407 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emit... |
 Toshiba Semiconductor |
2SA1408 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1408 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output Applications 2SA1408 Unit: mm • Large collector current and collector power dissipation capability • Recommended for vertical deflection output and sound output applications for line-operated TV. • Complementary to 2SC3621 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage VCEO −150 V Emitter-base voltage VEBO −6 V Collector current IC −1.5 A Base current IB −1.0 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.5 W 10 Junction temp... |
 Philips |
Tetrode ... |
 Actel |
HiRel FPGAs v3.0 HiRel FPGAs Fe a t ur es • Low-Power 0.8µ CMOS Technology 32 0 0D X Fe a t ur es • Highly Predictable Performance with 100% Automatic Placement and Routing • Device Sizes from 1,200 to 20,000 Gates • Up to 6 Fast, Low-Skew Clock Networks • Up to 202 User-Programmable I/O Pins • • • • • • • • • More Than 500 Macro Functions Up to 1,276 Dedicated Flip-Flops I/O Drive to 10 mA Devices Available to DSCC SMD CQFP and CPGA Packaging Nonvolatile, User Programmable Logic Fully Tested Prior to Shipment 100% Military Temperature Tested (–55°C to +125°C) QML Certified Devices • 100 MHz System Logic Integration • Highest Speed FPGA SRAM, up to 2.5 kbits Configurable Dual-Port SRAM • Fast Wide-D... |
 NEC |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR ... |
Sanyo |
2SA1415 Ordering number:ENN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver Applications Features · Adoption of FBET process. · High breakdown voltage (VCEO=160V). · Excellent linearity of hFE and small Cob. · Fast switching speed. · Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1415/2SC3645] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1415 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tem... |
Sanyo |
2SA1416 Ordering number:ENN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching time. · Ultrasmall size making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1416 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbo... |
Sanyo |
2SA1417 Ordering number : EN2006D 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions Wh... |
Sanyo |
2SA1418 Ordering number:ENN1788A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1418/2SC3648 High-Voltage Switching, Predriver Applications Applications · Color TV audio output, inverter. Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1418/2SC3648] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1418 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Ba... |
Sanyo |
2SA1419 Ordering number:ENN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Ultrasmall size making it easy to provide high- density hybrid ICs. Package Dimensions unit:mm 2038A [2SA1419/2SC3649] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1419 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector D... |
 Allegro MicroSystems |
High Precision Hall Effect AC-Coupled Differential Sensor The A1421, A1422, and A1423 are AC-coupled Hall-effect sensor ICs which include monolithic integrated circuits that switch in response to changing differential magnetic fields created by rotating ring magnets or, when coupled with a magnet, by ferrous targets. This family of dev... |
Allegro MicroSystems |
High Precision Hall Effect AC-Coupled Differential Sensor The A1421, A1422, and A1423 are AC-coupled Hall-effect sensor ICs which include monolithic integrated circuits that switch in response to changing differential magnetic fields created by rotating ring magnets or, when coupled with a magnet, by ferrous targets. This family of devices also includes an integrated capacitor that provides the high accuracy of analog sensing without an external filter capacitor. This reduces cost and components, while improving the reliability of the final sensor solution. Magnetic field changes affect the two integrated Hall transducers and then are differentially amplified on the chip. Differential design provides immunity to radial vibration, within the device ... |