| Description | Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. 1. B 2. C 3. E Absolute Maximum Ratings ( Ta = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation ... |
| Features |
— 4 2.0 Typ. — — — — — — — 3.0 Max. 10 10 — 30 1.0 1.5 — 4.0 V V MHz us Unit uA uA V
ICBO IEBO VCEO hFE
VCE(sat) IC=4.0A,IB=1.0A VBE(sat) IC=2.0A,IB=0.5A fT tS
VCE=10V, IC=0.5A IB1=-IB2=0.5A,
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Free Datasheet http://www.datasheet4u.com/
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| Datasheet |
 E13005-250 Datasheet - 167.38KB |
| Part Number | Description |
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