| Description | 2SC5237 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 400 MHz typ • High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 pF typ • Suitable for wide band video amplifier Outline TO-126FM 123 1. Emitter 2. Collector 3.... |
| Features |
• Excellent high frequency characteristics fT = 400 MHz typ • High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 pF typ • Suitable for wide band video amplifier Outline TO-126FM 123 1. Emitter 2. Collector 3. Base Free Datasheet http://www.datasheet4u.com/ 2SC5237 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC(peak) PC Junction temperature Storage temperature Note: 1. TC = 25°C Tj Tstg Ratings 250 250 3... |
| Datasheet |
 C5237 Datasheet - 48.73KB |
| Part Number | Description |
|---|---|
 Toshiba |
Silicon NPN Transistor 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • • • High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 230 230 5 15 1.5 150 150 −55 to 150 http://www.DataSheet4U.net/ Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F1A Electrical Characteristics (Tc = 25°C) Charact... |
Toshiba |
NPN Transistor Bipolar Transistors Silicon NPN Triple-Diffused Type 2SC5200N 1. Applications • Power Amplifiers 2. Features (1) High collector voltage: VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output stage 3. Packaging and Internal Circuit 2SC5200N 1. Base 2. Collector (Heatsink) 3. Emitter TO-3P(N) 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Tc = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Collector power dissipation (Note 1) VCBO VCEO VEBO IC IB PC 230 V 230 5 15 A 1.5 150 W Junction tempera... |
Toshiba |
2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications 2SC5201 Unit: mm • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 600 600 7 50 100 25 900 150 −55 to 150 V V V mA mA mW °C °C JEDEC JEITA TO-92MOD ― Note1: Using continuously under heavy loads (e.g. the application of ... |
 Hitachi |
Silicon NPN Transistor 2SC5206 Silicon NPN Triple Diffused Application High power switching Features • High breakdown voltage VCBO = 500 V • Isolated package TO-220FM Outline TO-220FM 123 1. Base 2. Collector 3. Emitter 2SC5206 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC PC*1 Tj Tstg Ratings 500 400 7 5 10 1.8 25 150 –55 to +150 Unit V V V A A W W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to base b... |
 Hitachi Semiconductor |
Silicon NPN Transistor This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... |
 ETC |
2SC520A www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ ... |
 Isahaya Electronics |
2SC5213 Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ http://www.idc-com.co.jp 854-0065 6-41 2002 11 Free Datasheet http://www.datasheet4u.com/ ... |
 Panasonic Semiconductor |
2SC5223 Power Transistors 2SC5223 Silicon NPN triple diffusion planar type For high-speed switching s Features q High collector to base voltage VCBO q High collector to emitter VCEO s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 500 500 7 2.0 1.0 10 150 –55 to +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to b... |
 Sanyo |
2SC5226 Ordering number:EN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. 0.425 Package Dimensions unit:mm 2059B [2SC5226] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electric... |
 Sanyo Semicon Device |
2SC5227 Free Datasheet http://www.nDatasheet.com Free Datasheet http://www.nDatasheet.com Free Datasheet http://www.nDatasheet.com Free Datasheet http://www.nDatasheet.com Free Datasheet http://www.nDatasheet.com ... |
Sanyo |
2SC5228 Ordering number:EN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=13.5dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. Package Dimensions unit:mm 2110A 1.9 [2SC5228] 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 Specifications 12 0.95 0.85 2.9 0.6 0.8 1.1 0.5 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : CP4 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC ... |
Sanyo |
2SC5229 Ordering number:EN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=6.5GHz typ. · Medium power operation : NF=1.7dB typ (f=1GHz). (VCE=8V, IC=40mA) : S21e2=11dB typ (f=1GHz). Package Dimensions unit:mm 2038A [2SC5229] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VC... |
Sanyo |
2SC5230 Ordering number:EN5046 NPN Epitaxial Planar Silicon Transistor 2SC5230 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=6.5GHz typ. Package Dimensions unit:mm 2004B [2SC5230] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Electrical Characteristics at Ta = 25˚C 1.3 Conditions Parameter Symbol Conditio... |
Sanyo |
2SC5231 Ordering number:EN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Very small-sized package permiting 2SC5231- applied sets to be made small and slim. Package Dimensions unit:mm 2106A [2SC5231] 0.3 0.75 0.6 0 to 0.1 0.4 0.8 0.4 1.6 0.1max 0.5 0.5 1.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC ... |
Toshiba |
2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application 2SC5232 Unit: mm • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage Emitter-base voltage Collector current Base current VCEO VEBO IC IB 12 V 5V 500 mA 50 mA Collector power dissipation Junction temperature Storage temperature range PC 150 mW Tj 125 °C Tstg −55 to 125 °C JEDEC JEITA TO-236MOD SC-59 Note: Using continuously unde... |
Toshiba |
2SC5233 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Switching and Muting Switch Application 2SC5233 Unit: mm • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation Junction temperature Storage temperature range PC 100 mW Tj 125 °C Tstg −55~125 °C JEDEC JEITA ― SC-70 Note: Using continuously under hea... |