| Description | CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBO... |
| Features |
J W W °C
MAXIMUM 6 50
UNIT °C / W
p.1
EMB20N03V
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
CHIPSET-IC.COM
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V
VGS = 10V, ID = 8A VG...
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| Datasheet |
 B20N03 Datasheet - 215.48KB |
| Part Number | Description |
|---|---|
 STMicroelectronics |
N-Channel MOSFET c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ SuperMESH™ technology, ro achieved through optimization of ST’s well P established strip-based PowerMESH™ layout. In te addition to a significant reduction in on- resistance, this device is designed to ensure a le high level of dv/dt capability for the most Obso demanding applications. 3 1 D²PAK Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Table 1. Device summary Order code STB20NK50Z Marking B20NK50Z Package D²PAK Packaging Tape and reel March 2012 This is information on a discontinued product. Doc ID 9118 Rev 10 1/15 www.st.com 15 Contents Contents STB20NK50Z ... |
STMicroelectronics |
N-CHANNEL POWER MOSFET The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. 3 2 1 TO-220FP 3 1 D²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STB20NM50FD STF20NM50FD STP20NM50FD B20NM50FD F20NM50FD P20NM... |
STMicroelectronics |
N-CHANNEL POWER MOSFET The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Table 1. Device summary Part number STP20NM60 STP20NM60FP STB20NM60T4 STB20NM60-1 STW20NM60 Marking P20NM60 P20NM60FP B20NM60 B20NM60-1 W20NM60 3 1 D²PAK 3 2 1 TO-220 3 2 1 TO-220FP TO-247 123 I²PAK Figure 1. Internal schematic diagram Package TO-22... |