| Description | These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp... |
| Features |
* Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits
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QW-R204-034.a
MJE13003-V
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
MJE13003L-V-x-TA3-T
MJE13003G-V-x-TA3-T
MJE13003L-V-x-TM3-T
MJE13003G-V-x-TM3-T
MJE13003L-V-x-TMS-T
MJE13003G-V-x-TMS-T
MJE13003L-V-x-TN3-R
M...
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| Datasheet |
 MJE13003-V Datasheet - 401.08KB |
| Part Number | Description |
|---|---|
 Motorola |
1.5 AMPERE NPN SILICON POWER TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13002/D Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: • Reverse Biased SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C . . . tc @ 1 A, 100_C is 290 ns (Typ). • 700 V Blocking Capability • SOA and Switching Applications Information. ™ Data Sheet MJE1... |
 SEMTECH |
NPN Silicon Power Transistors MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection circuits. SPECIFICATION FEATURES: • Reverse Biased SOA with Inductive Loads TC=100oC • Inductive Switching Matrix 0.5 to 1.5 Amp,25 and 100oC • tc @ 1A, 100oC is 290 ns (Typ). • 700V Blocking Capability • SOA and Switching Applications Information. Absolute Maximum Ratings (T a=25oC) TO-225AA Package Symbol Value MJE13002 MJE13003 Collector Emitter Volta... |
 MCC |
NPN Silicon Plastic-Encapsulate Transistor MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJE13003 Features • • • • • • • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Capable of 1.5Watts of Power Dissipation. Collector-current 1.5A Collector-base Voltage 700V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Plastic-Encapsulate Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 TO-220 Min 400 700 9.0 1000 500 1000 Max Units F B C S Q T A U 1 2 3 Electrical Characteristics @ 25 C Unless Otherwise Specified... |
 CDIL |
(MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Emitter Current Continuous Peak Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Total Power Dissipation @ TC=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth (j-c) 3.12 89 275 ºC/W ºC/W ºC Rth (j-a) Junction to Ambient in free air Maximum Load Temperature for TL Soldering Purposes 1/8" from Case for 5 Seconds *Pulse Test: Pulse Width=5ms, Duty Cycle<10% ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage **VCEO... |
 UTC |
NPN SILICON POWER TRANSISTOR These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-TA3-T MJE13003G-TA3-T MJE13003L-TM3-T MJE13003G-TM3-T MJE13003L-TMS-T MJE13003G-TMS-T MJE13003L-TN3-R MJE13003G-TN3-R MJE13003L... |
 ON Semiconductor |
NPN Silicon Power Transistor MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features • Reverse Biased SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C tc @ 1 A, 100_C is 290 ns (Typ) • 700 V Blocking Capability • SOA and Switching Applications Information • Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emit... |
 ARTCHIP |
NPN EPITAXIAL PLANAR TRANSISTOR The MJE13003 is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C).................................................................................... 3.5 W Total Power Dissipation (Tc=25°C) ..................... |
 DC COMPONENTS |
NPN EPITAXIAL PLANAR TRANSISTOR Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. TO-126 Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEV 700 V VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 1.5 A Base Current Total Power Dissipation(TC=25oC) Junction Temperature Storage Temperature IB PD TJ TSTG 0.75 A 40 W +150 oC -55 to +150 oC .304(7.72) .285(7.52) .041(1.05) .037(0.95) .154(3.91) .150(3.81) .105(2.66) .095(2.41) .055(1.39) .045(1.14) .152(3.86) .138(3.50) .279(7.09) .275(6.99) 1 23 3oTyp .620(15.75) .600(15.25) .052(1.32) .0... |
 SavantIC |
Silicon NPN Power Transistors ·With TO-126 package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current (DC) ICM Collector current-Peak IB Base current IBM Base current-Peak IE Emitter current IEM Emitter current-Peak PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter... |
 Central Semiconductor |
SILICON NPN POWER TRANSISTOR The CENTRAL SEMICONDUCTOR MJE13003 is a silicon NPN power transistor designed for high speed power switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Emitter Voltage VCEO Collector-Emitter Voltage VCEV Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Peak Base Current IBM Continuous Emitter Current IE Peak Emitter Current IEM Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 400 700 9.0 1.5 3.0 0.75 1.5 2.25 4.5 40 1.4 -65 ... |
 KEC |
TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR TECHNICAL DATA MJE13003 TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current VCBO VCEO VEBO IC ICP IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg RATING 700 400 9 1.5 3 0.75 1.5 20 150 -55 150 UNIT V V V A A W A B C H J K D E F G L M N O P 12 3 1. EMITTER 2. COLLECTOR 3.... |
 Unisonic Technologies |
NPN SILICON TRANSISTOR The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits. FEATURES *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7μs(Max.) @Ic=1.0A. ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K MJE13003L-E-x-T92-B MJE13003G-E-x-T92-B MJE13003L-E-x-T92-K MJE13003G-E-x-T92-K MJE13003L-E-x-T92-A-B MJE13003G... |
Unisonic Technologies |
NPN SILICON TRANSISTOR These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 900V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-H-x-T60-K MJE13003G-H-x-T60-K MJE13003L-H-x-T6C-A-K MJE13003G-H--x-T6C-A-K MJE13003L-H-x-T6C-K MJE13003G-H-x-T6C-K MJE13003L-H-x-... |
UTC |
NPN SILICON TRANSISTOR These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ Tc=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tc = 290ns @ 1A, 100°C. * 700V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-P-AB3-R MJE13003G-P-AB3-R MJE13003L-P-T60-K MJE13003G-P-T60-K MJE13003L-P-T6C-A-K MJE13003G-P-T6C-A-K MJE13003L-P-T6C-F-K MJE... |
Unisonic Technologies |
NPN SILICON TRANSISTOR These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-R-x-T92-B MJE13003G-R-x-T92-B MJE13003-L-R-x-T92-K MJE13003G-R-x-T92-K Note: Pin assignment: E: Emitter B: Base C: Collector Pack... |
UTC |
NPN SILICON POWER TRANSISTOR These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115V and 220V applications in switch mode. FEATURES * 700V blocking capability NPN SILICON TRANSISTOR 1 TO-220 1 TO-251 1 TO-252 1 TO-251S 1 TO-126 1 TO-126C APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits 1 1 TO-126S TO-92 1 TO-92NL ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-XS-TA3-T MJE13003G-XS-TA3-T MJE13003L-XS-TM3-T MJE13003G-XS-TM3-T MJE13003L-XS-TMS-T MJE13003G-XS-TMS-T MJE13003L-XS-TN3-R MJE13003G-XS-TN3-R MJE1300... |