MOSFET transistor

MJE13003-XS UTC NPN SILICON POWER TRANSISTOR

Description These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115V and 220V applications in switch mode.  FEATURES * 700V blocking capability NPN SILICON TRANSISTOR 1 TO-220 1 TO-251 1 TO-252 1 TO-251S 1 ...
Features * 700V blocking capability NPN SILICON TRANSISTOR 1 TO-220 1 TO-251 1 TO-252 1 TO-251S 1 TO-126 1 TO-126C
 APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits 1 1 TO-126S TO-92 1 TO-92NL
 ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-XS-TA3-T MJE13003G-XS-TA3-T MJE13003L-XS-TM3-T MJE13003G-XS-TM3-T MJE13003L-XS-TMS-T MJE13003G-XS-TMS-T MJE13003L-XS-TN3-R MJE13003G-XS-TN3-R MJE13003L-XS-T60-F-K MJE13003G-XS-T60-F-K MJE13003L-XS-T6C-A-K MJE13003G-XS-T6C-A-K MJE13003L-XS-T6C-F-K MJE1...

Datasheet PDF File MJE13003-XS Datasheet - 292.12KB

MJE13003-XS   MJE13003-XS  





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Part Number Description
MJE13003-E
manufacturer
Unisonic Technologies
NPN SILICON TRANSISTOR
The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.  FEATURES *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7μs(Max.) @Ic=1.0A.  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K MJE13003L-E-x-T92-B MJE13003G-E-x-T92-B MJE13003L-E-x-T92-K MJE13003G-E-x-T92-K MJE13003L-E-x-T92-A-B MJE13003G...
MJE13003-H
manufacturer
Unisonic Technologies
NPN SILICON TRANSISTOR
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.  FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 900V blocking capability  APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits  ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-H-x-T60-K MJE13003G-H-x-T60-K MJE13003L-H-x-T6C-A-K MJE13003G-H--x-T6C-A-K MJE13003L-H-x-T6C-K MJE13003G-H-x-T6C-K MJE13003L-H-x-...
MJE13003-P
manufacturer
UTC
NPN SILICON TRANSISTOR
These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.  FEATURES * Reverse biased SOA with inductive load @ Tc=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tc = 290ns @ 1A, 100°C. * 700V blocking capability  APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits  ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-P-AB3-R MJE13003G-P-AB3-R MJE13003L-P-T60-K MJE13003G-P-T60-K MJE13003L-P-T6C-A-K MJE13003G-P-T6C-A-K MJE13003L-P-T6C-F-K MJE...
MJE13003-R
manufacturer
Unisonic Technologies
NPN SILICON TRANSISTOR
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.  FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability  APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits  ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-R-x-T92-B MJE13003G-R-x-T92-B MJE13003-L-R-x-T92-K MJE13003G-R-x-T92-K Note: Pin assignment: E: Emitter B: Base C: Collector Pack...
MJE13003-V
manufacturer
Unisonic Technologies
NPN SILICON TRANSISTOR
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. „ FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability „ APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 9 QW-R204-034.a MJE13003-V „ ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MJE13003L-V-x-TA3-T MJE13003G-V-x-TA3-T ...


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