| Description | Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection，High reliability ·100% avalanche tested ·RoHS product ·Minimum Lot-to-Lot variations for robust device performance and reliable oper... |
| Features |
·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection，High reliability ·100% avalanche tested ·RoHS product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor HBR10150CT APPLICATIONS ·High Frequency switch power Supply ·Free wheeling diodes and polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) IFSM Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Curr... |
| Datasheet |
 HBR10150CT Datasheet - 212.74KB |
| Part Number | Description |
|---|---|
 Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.)：201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.)：201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.)：201108J 8/8 ... |
 INCHANGE |
Schottky Barrier Rectifier Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection，High reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High Frequency switch power Supply ·Free wheeling diodes and polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 150 V IF(AV) Average Rectified Forward Current (Per Leg) (Total) 5 10 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed on 80 A rated ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.)：201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.)：201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.)：201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.)：201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃） APPLICATIONS High frequency switch power supply Free wheeling diodes, polarity protection applications Package TO-22O TO-22OHF TO-263 DPAKM ， ， （RoHS） FEATURES Common cathode structure Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection，High reliability RoHS product ORDER MESSAGE - Halogen-Tube Order codes - - Halogen Free-Tube Halogen-Reel - Halogen Free-Reel Marking Package HBR10150S-CA-B HBR10150S-CA-BR N/A N/A HBR10150S TO-220 HBR10150S-FA-B HBR10150S-... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.)：201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.)：201108J 8/8 ... |