Description | R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10(2×5)A 150 V 175 ℃ 0.72V (@Tj=125℃) APPLICATIONS High frequency switch power supply Free wheeling diodes, polarity protection applications Package TO-22O TO-22OHF TO-263 DPAKM , ,... |
Features |
Common cathode structure Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection,High reliability RoHS product ORDER MESSAGE - Halogen-Tube Order codes - - Halogen Free-Tube Halogen-Reel - Halogen Free-Reel Marking Package HBR10150S-CA-B HBR10150S-CA-BR N/A N/A HBR10150S TO-220 HBR10150S-FA-B HBR10150S-FA-BR N/A N/A HBR10150S TO-220HF HBR10150S-S-B N/A HBR10150S-S-BR N/A HBR10150S-S-A HBR10150S-S-AR HBR10150S TO-263 HBR10150S-RM-A HBR10150S-RM-AR HBR10150S DPAKM (Rev.):202107E 1/8 R ABSOLUTE RATINGS (Tc=25℃)... |
Datasheet | HBR10150S Datasheet - 643.87KB |
Part Number | Description |
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Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
INCHANGE |
Schottky Barrier Rectifier Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection,High reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High Frequency switch power Supply ·Free wheeling diodes and polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 150 V IF(AV) Average Rectified Forward Current (Per Leg) (Total) 5 10 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed on 80 A rated ... |
Inchange Semiconductor |
Schottky Barrier Rectifier Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection,High reliability ·100% avalanche tested ·RoHS product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor HBR10150CT APPLICATIONS ·High Frequency switch power Supply ·Free wheeling diodes and polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) IFSM Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current (Per Leg) (Total) Nonrepetitive Peak Surge Current 8.3ms sin... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |