Description | of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
Features |
zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction
Temperature zGuard ring for overvoltage
protection,High reliability zRoHS product
TO-22O TO-22OBF
TO-22OF TO-22OHF
ORDER MESSAGE
Order codes
Marking
Package
HBR10150Z
HBR10150 TO-220
HBR10150ZR
HBR10150 TO-220
HBR10150F
HBR10150 TO-220F
HBR10150FR
HBR10150 TO-220F
HBR10150BF
HBR10150 TO-220BF
HBR10150BFR HBR10150 TO-220BF
HBR10150HF
HBR10150 TO-220HF
HBR10150HFR HBR10150 TO-220HF
Halogen Free NO YES NO YES NO YES NO YES
Packaging Tube Tube Tube Tube Tube Tube Tube ...
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Datasheet | HBR10150FR Datasheet - 330.54KB |
Part Number | Description |
---|---|
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
INCHANGE |
Schottky Barrier Rectifier Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection,High reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High Frequency switch power Supply ·Free wheeling diodes and polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 150 V IF(AV) Average Rectified Forward Current (Per Leg) (Total) 5 10 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed on 80 A rated ... |
Inchange Semiconductor |
Schottky Barrier Rectifier Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overvoltage protection,High reliability ·100% avalanche tested ·RoHS product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor HBR10150CT APPLICATIONS ·High Frequency switch power Supply ·Free wheeling diodes and polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) IFSM Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current (Per Leg) (Total) Nonrepetitive Peak Surge Current 8.3ms sin... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10(2×5)A 150 V 175 ℃ 0.72V (@Tj=125℃) APPLICATIONS High frequency switch power supply Free wheeling diodes, polarity protection applications Package TO-22O TO-22OHF TO-263 DPAKM , , (RoHS) FEATURES Common cathode structure Low power loss, high efficiency High Operating Junction Temperature Guard ring for overvoltage protection,High reliability RoHS product ORDER MESSAGE - Halogen-Tube Order codes - - Halogen Free-Tube Halogen-Reel - Halogen Free-Reel Marking Package HBR10150S-CA-B HBR10150S-CA-BR N/A N/A HBR10150S TO-220 HBR10150S-FA-B HBR10150S-... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |
Jilin Sino |
SCHOTTKY BARRIER DIODE of Changes 2011-08-09 201002I 201108J Changed IFSM Spec. (Rev.):201108J 8/8 ... |