| Description | Power Transistors 2SC5104 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 8.5±0.2 Unit: mm 3.4±0.3 6.0±0.2 1.0±0.1 ■ Features 3.0–+00..24 4.4±0.5 14.4±0.5 10.0±0.3 1.5±0.1 • High-speed switching 1.5–+00.4 • High collector-base voltage (Emitter open... |
| Features |
3.0 –+00..24 4.4±0.5 14.4±0.5 10.0±0.3 1.5±0.1 • High-speed switching 1.5 –+00.4 • High collector-base voltage (Emitter open) VCBO • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • N type package enabling direct soldering of the radiating fin to the / printed circuit board, etc. of small electronic equipment 4.4±0.5 2.0±0.5 0 to 0.4 0.8±0.1 2.54±0.3 1.4±0.1 5.08±0.5 R = 0.5 R = 0.5 1.0±0.1 0.4±0.1 123 (8.5) (6.0) 1.3 ■ Absolute Maximum Ratings TC = 25°C e e) Parameter Symbol Rating Unit (7.6) (1.5) c e. d typ Collector-base voltage (Em... |
| Datasheet |
 C5104 Datasheet - 257.56KB |
| Part Number | Description |
|---|---|
 Sanken electric |
Silicon NPN Transistor 2SC5100 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5100 160 120 6 8 3 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SC5100 10max 10max 120min 50min∗ 0.5max 20typ 200typ V MHz 16.2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=160V VEB=6V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 Unit µA 23.0±0.3 V 9.5±0.2 µA a b pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4... |
Sanken electric |
2SC5101 2SC5101 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5101 200 140 6 10 4 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SC5101 10max 10max 140min 50min∗ 0.5max 20typ 250typ V MHz 16.2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 Unit µA 23.0±0.3 V 9.5±0.2 µA a b pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 ... |
 ROHM Electronics |
2SC5103 www.datasheet4u.com 2SC5103 Transistors High speed switching transistor (60V, 5A) 2SC5103 !Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 µs at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. !External dimensions (Units : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 5.1 6.5 C0.5 1.0 0.5 0.5 1.5 2.5 9.5 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single pulse Pw=100ms ROHM : CPT3 EIAJ : SC-63 Unit V V V A(DC) A(Pulse) ∗ W W(Tc=25°C) °C °... |
 Toshiba |
2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 2SC5106 For VCO Application Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 10 3 15 30 150 125 −55 to 125 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operati... |
Toshiba |
2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 2SC5107 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 10 V 3 V 15 mA 30 mA 100 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operati... |
Toshiba |
2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 2SC5108 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 V 10 V 3 V 15 mA 30 mA 100 mW 125 °C −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operati... |
 Siemens |
8-Bit CMOS Microcontroller (8-Bit CMOS microcontroller) with mask-programmable ROM (2.5K), 12 MHz with mask-programmable ROM (4K), 12 MHz with mask-programmable ROM (8K), 12 MHz with mask-programmable ROM (12K), 12 MHz with mask-programmable ROM (12K), 12 MHz, ext. temp. – 40 ˚C to 85 ˚C with mask-programmable ROM (16K), 12 MHz with mask-programmable ROM (16K), 12 MHz, ext. temp. – 40 ˚C to 85 ˚C Q67120-DXXXX P-LCC-44 Q67120-DXXXX P-LCC-44 Q67120-DXXXX P-LCC-44 Q67120-DXXXX P-LCC-44 Q67120-DXXXX P-LCC-44 C513A-2RN Q67120-DXXXX P-LCC-44 Q67120-DXXXX P-LCC-44 C513A-2RM Q67120-DXXXX P-MQFP-44 with mask-programmable ROM (16K), 12 MHz Q67120-DXXXX P-MQFP-44 with mask-programmable ROM (16K), 12 MHz, ext. temp. – 40 ˚C ... |
 OKI |
Printer User Guide C301/C321/C331/C511/C531/ES5431 User’s Guide PREFACE Every effort has been made to ensure that the information in this document is complete, accurate, and up-to-date. The manufacturer assumes no responsibility for the results of errors beyond its control. The manufacturer also cannot guarantee that changes in software and equipment made by other manufacturers and referred to in this guide will not affect the applicability of the information in it. Mention of software products manufactured by other companies does not necessarily constitute endorsement by the manufacturer. While all reasonable efforts have been made to make this document as accurate and helpful as possible, we make no warrant... |
Toshiba |
2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 2SC5110 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 10 3 30 60 100 125 −55 to 125 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (... |
Toshiba |
2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 2SC5111 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IB IC PC Tj Tstg 20 10 3 30 60 100 125 −55 to 125 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (... |
 ETC |
2SC5114 www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com ... |
 Panasonic Semiconductor |
2SC5121 Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1 3.8±0.3 11.0±0.5 • High collector-base voltage (Emitter open) VCBO 3.05±0.1 • High collector-emitter voltage (Base open) VCEO • Small collector output capacitance (Common base, input open circuited) Cob • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 / ■ Absolute Maximum Ratings Ta = 25°C e ) Parameter Symbol Rating Unit c type Collector-base voltage (Emitter open) VCBO 400 V n d tage. ued Collector-emitter voltage (Base open) VCEO 400 V le s ontin Emitter-base voltage (Col... |
 Nippon Precision Circuits |
CB Transceiver PLL www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com ... |
Toshiba |
2SC5122 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current DC Pulse IC 50 mA ICP 100 Base current IB 25 mA Collector power dissipation PC 900 mW JEDEC TO-92MOD Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-5J1A Note1: Using continuously under heavy loads (e.... |
Sanken electric |
2SC5124 2SC5124 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5124 1500 800 6 10(Pulse20) 5 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose (Ta=25°C) 2SC5124 100max 1max 100max 800min 8min 4t o9 5max 1.5max 3typ 130typ Unit µA mA µA V sElectrical Characteristics Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCE=12V, IE=–1A VCB=10V, f=1MHz External Dimensions FM100(TO3PF)... |
 Mitsubishi Electric Semiconductor |
2SC5125 ... |