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| Datasheet |
 E13007-2 Datasheet - 242.25KB |
| Part Number | Description |
|---|---|
 ON Semiconductor |
NPN Bipolar Power Transistor MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features • SOA and Switching Applications Information • Standard TO−220 • These Devices are Pb−Free and are RoHS Compliant* • Complementary to the MJE5850 through MJE5852 Series MAXIMUM RATINGS Rating Collector−Emitter Sustaining Voltage Collector−Base Breakdown Voltage Emitter−Base Voltage Collector Current −... |
 Fairchild Semiconductor |
NPN Silicon Transistor KSE13006/13007 KSE13006/13007 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : KSE13006 : KSE13007 VCEO Collector-Emitter Voltage : KSE13006 : KSE13007 VEBO IC ICP IB PC TJ TSTG Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 600 700 300 400 9 8 16 4 80 150 - 65 ~ 150 Units V V V V V A A A W °C °C Electrical Characteristics TC=25°C unles... |
Fairchild Semiconductor |
NPN Silicon Transistor KSE13007F KSE13007F High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO V CEO VEBO IC ICP IB PC TJ TSTG Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 8 16 4 40 150 - 65 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO IEBO hFE ... |
Fairchild Semiconductor |
NPN Silicon Transistor KSE13007F KSE13007F High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO V CEO VEBO IC ICP IB PC TJ TSTG Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 8 16 4 40 150 - 65 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO IEBO hF... |