| Description | MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode applications such as Switching Reg... |
| Features |
• SOA and Switching Applications Information • Standard TO−220 • These Devices are Pb−Free and are RoHS Compliant* • Complementary to the MJE5850 through MJE5852 Series MAXIMUM RATINGS Rating Collector−Emitter Sustaining Voltage Collector−Base Breakdown Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Base Current − Peak (Note 1) Emitter Current − Continuous Emitter Current − Peak (Note 1) Total Device Dissipation @ TC = 25_C Derate above 25°C Symbol VCEO VCES VEBO IC ICM IB IBM IE IEM PD Value 400 700 9.0 8.... |
| Datasheet |
 E13007 Datasheet - 275.53KB |
| Part Number | Description |
|---|---|
 CSF |
Triode ... |
 DEC |
POWER TRANSISTOR POWER TRANSISTOR E13001 SWITCHING REGULATOR APPLICATION • High speed switching • Suitable for switching regulator and motor control • Case : TO-92 molded plastic body R A B P L F K NPN SILICON TRANSISTOR FEATURES Tc=25oC unless otherwise specified Parameter Power dissipation Collector current Operating and storage junction temperature range G H V 12 3 N NC Symbol PCM ICM TJ, TSTG TO-92 DIM INCHES MIN MAX MILLIMETERS MIN MAX A 0.175 0.205 4.44 5.21 SEATING B 0.290 0.310 7.37 7.87 PLANE C 0.125 0.165 3.18 4.19 D 0.018 0.022 0.46 0.56 F 0.016 0.019 0.41 0.48 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.018 0.024 0.46 0.61 K 0.500 --- 12.70 --- D L 0.250 --- 6.3... |
DEC |
POWER TRANSISTOR ... |
 Daesan Electronics |
POWER TRANSISTOR www.DataSheet4U.com w w w a t a D . S 4 t e e h U m o .c www.DataSheet4U.com w w w a t a D . S 4 t e e h U m o .c ... |
Daesan Electronics |
POWER TRANSISTOR www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com ... |
 Fairchild Semiconductor |
KSE13005 www.DataSheet.co.kr KSE13004/13005 KSE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Parameter : KSE13004 : KSE13005 : KSE13004 : KSE13005 Value 600 700 300 400 9 4 8 2 75 150 - 65 ~ 150 Units V V V V V A A A W °C °C Electrical Characteristics TC=25°... |
 Thinki Semiconductor |
(MJE13005 Series) Silicon NPN Power Transistor Silicon NPN, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. 1. B 2. C 3. E Absolute Maximum Ratings ( Ta = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature l VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 700 400 9 5.0 2.0 75 150 -55~150 Unit V V V A A W o C C Unit:mm Storage Temperature o Electrical Characteristics ( Ta = 25℃ ) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Curr... |
 Jingdao |
Bipolar Junction Transistor R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. E13005SDL Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast，etc 2．FEATURES Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tam... |
Fairchild Semiconductor |
NPN Silicon Transistor KSE13006/13007 KSE13006/13007 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : KSE13006 : KSE13007 VCEO Collector-Emitter Voltage : KSE13006 : KSE13007 VEBO IC ICP IB PC TJ TSTG Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 600 700 300 400 9 8 16 4 80 150 - 65 ~ 150 Units V V V V V A A A W °C °C Electrical Characteristics TC=25°C unles... |
Fairchild Semiconductor |
NPN Silicon Transistor KSE13006/13007 KSE13006/13007 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : KSE13006 : KSE13007 VCEO Collector-Emitter Voltage : KSE13006 : KSE13007 VEBO IC ICP IB PC TJ TSTG Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 600 700 300 400 9 8 16 4 80 150 - 65 ~ 150 Units V V V V V A A A W °C °C Electrical Characteristics TC=25°C unles... |
 San Pu |
High Voltage Power Transistor www.DataSheet4U.com ! ( !6 8>2210- ! "#$ # # % & # $$ % & $ $' #% # # $ / " 122 322 4 5 52 07.̚8.2 8.2 (( !) * +,-.ć # % # #0& $ #0 % # % #0& $ # "## # 6 $$ & # 9" % % # "# # "# $ + ć ć / ( 122 322 4 # % #0& $ &# #0 % % #0& $ #0& $ #0 % % 6 6 #0& $ "## "## ) ) # "# "# # # &# &# ; ; ; # * +,-.ć % & & & & & "## "## & & " '' " '' " '' "## *8/ *-/ *$ / #0 % & $ 0 % # % % # & *$ / $ ' $$ # $ $ $ ,2<.% = ,2 ,82% = ,2 ,8% = ,2 ,7.2 = ,2 ,322 = ,2 ,4 = ,2 ,. = ,,. = ,8% ,-<2 = ,2<3 ,.<2 = ,8<2 ,5<2 = ,-<2 ,.<2 = ,8<2 ,-.2 ,. & &8,0 &-,8 ( : 82 4 82 -2 -2 32 2<1 8<. ><2 8<3 2<5 " www.DataSheet4U.com ! ( !6 8>2210- www.DataSheet4U.com ! ( !6 8>2210- ... |
Fairchild Semiconductor |
NPN Silicon Transistor KSE13007F KSE13007F High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO V CEO VEBO IC ICP IB PC TJ TSTG Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 8 16 4 40 150 - 65 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO IEBO hFE ... |
Fairchild Semiconductor |
NPN Silicon Transistor KSE13007F KSE13007F High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO V CEO VEBO IC ICP IB PC TJ TSTG Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 8 16 4 40 150 - 65 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO IEBO hF... |
 ETC |
KSE13009L / MJE13009L KSE13009L — High Voltage Switch Mode Applications KSE13009L High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control October 2008 1 TO-3P 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Ratings 700 400 9 12 24 6 130 150 - 65... |
 IXYS |
High Power Sonic FRD WESTCODE An IXYS Company Date:- 3 Aug, 2011 Data Sheet Issue:- A1 Advance Data High Power Sonic FRD Type E1300VF45C Absolute Maximum Ratings VOLTAGE RATINGS VRRM VRSM VR(d.c.) Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1) Maximum reverse d.c. voltage (note 1) MAXIMUM LIMITS 4500 4800 3000 UNITS V V V OTHER RATINGS (note 6) IF(AV)M IF(AV)M IF(AV)M IF(RMS) IF(d.c.) IFSM IFSM2 I2t I2t Prr Tj op Tstg Mean forward current, Tsink=55°C, (note 2) Mean forward current. Tsink=100°C, (note 2) Mean forward current. Tsink=100°C, (note 3) Nominal RMS forward current, Tsink=25°C, (note 2) D.C. forward current, Tsink=25°C, (note 4) Peak non-repetitive sur... |
 Philips |
S.Q. Tube page 1 2 3 4 5 6 7 8 9 E130L sheet 1 2 3 4 5 6 7 8 FP date 1968.12 1968.12 1968.12 1968.12 1968.12 1968.12 1968.12 1968.12 2000.12.03 ... |