| Description | KSE13007F KSE13007F High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO V CEO VEBO IC ICP ... |
| Features |
0µs, Duty Cycle≤2%
IC = 10mA, IB = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 2A VCE = 5V, IC = 5A
IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A
IC = 2A, IB = 0.4A IC = 5A, IB = 1A
VCB = 10V , f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC =125V, IC = 5A IB1 = - IB2 = 1A RL = 50Ω
Min. 400
8 5
4
Typ. 110
Max.
1 60 30 1 2 3 1.2 1.6
1.6 3
0.7
Units V mA
V V V V V pF MHz µs µs µs
©2002 Fairchild Semiconductor Corporation
Rev. A2, June 2002
Typical Characteristics
100
VCE = 5V
10
hFE, DC CURRENT GAIN
1
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
1000
Cob[pF], CAPACITANCE
100
1...
|
| Datasheet |
 E13007F2 Datasheet - 50.40KB |
| Part Number | Description |
|---|---|
 ON Semiconductor |
NPN Bipolar Power Transistor MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. Features • SOA and Switching Applications Information • Standard TO−220 • These Devices are Pb−Free and are RoHS Compliant* • Complementary to the MJE5850 through MJE5852 Series MAXIMUM RATINGS Rating Collector−Emitter Sustaining Voltage Collector−Base Breakdown Voltage Emitter−Base Voltage Collector Current −... |
 Fairchild Semiconductor |
NPN Silicon Transistor KSE13006/13007 KSE13006/13007 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : KSE13006 : KSE13007 VCEO Collector-Emitter Voltage : KSE13006 : KSE13007 VEBO IC ICP IB PC TJ TSTG Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 600 700 300 400 9 8 16 4 80 150 - 65 ~ 150 Units V V V V V A A A W °C °C Electrical Characteristics TC=25°C unles... |
 San Pu |
High Voltage Power Transistor www.DataSheet4U.com ! ( !6 8>2210- ! "#$ # # % & # $$ % & $ $' #% # # $ / " 122 322 4 5 52 07.̚8.2 8.2 (( !) * +,-.ć # % # #0& $ #0 % # % #0& $ # "## # 6 $$ & # 9" % % # "# # "# $ + ć ć / ( 122 322 4 # % #0& $ &# #0 % % #0& $ #0& $ #0 % % 6 6 #0& $ "## "## ) ) # "# "# # # &# &# ; ; ; # * +,-.ć % & & & & & "## "## & & " '' " '' " '' "## *8/ *-/ *$ / #0 % & $ 0 % # % % # & *$ / $ ' $$ # $ $ $ ,2<.% = ,2 ,82% = ,2 ,8% = ,2 ,7.2 = ,2 ,322 = ,2 ,4 = ,2 ,. = ,,. = ,8% ,-<2 = ,2<3 ,.<2 = ,8<2 ,5<2 = ,-<2 ,.<2 = ,8<2 ,-.2 ,. & &8,0 &-,8 ( : 82 4 82 -2 -2 32 2<1 8<. ><2 8<3 2<5 " www.DataSheet4U.com ! ( !6 8>2210- www.DataSheet4U.com ! ( !6 8>2210- ... |
Fairchild Semiconductor |
NPN Silicon Transistor KSE13007F KSE13007F High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO V CEO VEBO IC ICP IB PC TJ TSTG Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 8 16 4 40 150 - 65 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO IEBO hFE ... |