MOSFET transistor

740 GFD 400V N-Channel MOSFET

Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well sui...
Features
• 10.5A, 400V, RDS(on) = 0.55Ω @VGS = 10 V
• Low gate charge ( typical 30nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 740 TO-220 0GFD www.goford.cn TEL:0755-86350980 FAX:0755-86350963 740 Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter 740 740F VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 400 10.5 6.6 10.5 6.6 IDM Drain Current- Pulsed (Note 1) 42 42 VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note...

Datasheet PDF File 740 Datasheet - 415.95KB

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