| Description | Elektronische Bauelemente D882S NPN Plastic Encapsulated Transistor FEATURES Power Dissipation RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free GH TO-92 CLASSIFICATION OF hFE Rank Range R 60-120 0 100-200 Y 160-320 GR 200-400 J AD B K E CF REF. A B C D E F G H J K ... |
| Features |
Power Dissipation RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free GH TO-92 CLASSIFICATION OF hFE Rank Range R 60-120 0 100-200 Y 160-320 GR 200-400 J AD B K E CF REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 Emitter Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Diss... |
| Datasheet |
 D882S Datasheet - 210.55KB |
| Part Number | Description |
|---|---|
 UTC |
NPN Transistor The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * Complementary to 2SB834 ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free - 2SD880G-AB3-R 2SD880L-TA3-T 2SD880G-TA3-T Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 TO-220 Pin Assignment 123 BCE BCE Packing Tube Tube MARKING SOT-89 TO-220 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-013.G 2SD880 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified) PARAMETER S... |
 SavantIC |
Silicon NPN Power Transistors www.dat·aWshiethet4Tu.Oco-m220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL CHARACTERISTICS R:jc Thermal resistance junction to case VALUE 60 6... |
 MCC |
NPN Silicon Power Transistors MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD880-Q 2SD880-Y 2SD880-GR Features • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • Power amplifier applications • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 NPN Silicon Power Transistors Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating Unit 60 V 60 V 7 V 3 A 1.5 W... |
 USHA |
SILICON PLASTIC POWER TRANSISTOR SILICON PLASTIC POWER TRANSISTOR NPN 2SD880Y 3A 30W Technical Data …designed for Low Frequency Power Amplifier. F Collector-Emitter Voltage: VCEO=60V F DC Current Gain: 20 @ IC=3A F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Collector- Emitter Voltage Collector – Base Voltage Emitter Base Voltage Collector Current – Continuos Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage junction Temperature Range THERMAL CHARACTERISTICS Characteristic V CEO V CB V EB IC IB PD Tj,Tstg 60 60 7 3 0.3 30 0.24 -55 to +150 Symbol Max. Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C Unit Thermal resistance junction to case R thjc 4.16 °C/W ELECTRICAL CHARACT... |
MCC |
NPN Silicon Plastic-Encapsulate Transistor D882 Features • Halogen Free Available Upon Request By Adding Suffix "-HF" • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 100℃/W Junction to Ambient Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Symbol VCBO VCEO VEBO IC PD Rating 40 30 6 3 1.25 Unit V V V A W Internal Structure 2,4 1 3 1.BASE 2,4.COLLECTOR 3.EMI... |
 NEC |
NPN SILICON POWER TRANSISTOR The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. FEATURES • Low saturation voltage VCE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. 3.8 ±0.2 12.0 MAX. PACKAGE DRAWING (Unit: mm) 8.5 MAX. 3.2 ±0.2 2.8 MAX. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipations −55 to +150°C 150°C Maximum Total Power Dissipation (T... |
 AiT Semiconductor |
NPN TRANSISTORS The D882 is available in SOT-89 Package FEATURES Power dissipation Available in SOT-89 Package ORDERING INFORMATION Package Type Part Number SOT-89 D882 Note SPQ: 1,000pcs/Reel AiT provides all RoHS Compliant Products PIN DESCRIPTION 1. BASE 2. COLLECTOR 3. EMITTER REV1.1 - MAR 2015 RELEASED, MAR 2019 UPDATED - -1- AiT Semiconductor Inc. www.ait-ic.com D882 GENERAL PURPOSE TRANSISTORS NPN TRANSISTORS ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise noted VCBO, Collector-Base Voltage 40V VCEO, Collector-Emitter Voltage 30V VEBO, Emitter-Base Voltage 6V IC, Collector Current-Continuous 1.5A PC, Collector Power Dissipation 1.2W TJ, Junction Temperature 150°C ... |
SavantIC |
Silicon NPN Power Transistor www.dat·aWshiethet4TuO.co-1m26 package ·Complement to type 2SB772 APPLICATIONS ·Audio amplifier ·Voltage regulator ·DC-DC converter ·Relay driver PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base · Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO Collector-emitter voltage Emitter-base voltage IC Collector current (DC) ICM Collector current-peak PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector Ta=25 TC=25 VALUE 40 30 5 3 7 1 10 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors CHARACTERISTICS T... |
UTC |
NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SD882 NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 1 TO-126 1 TO-126C 1 TO-92NL www.DataSheet4U.com 1 TO-251 1 TO-252 *Pb-free plating product number: 2SD882L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD882-x-T60-K 2SD882L-x-T60-K 2SD882-x-T6C-K 2SD882L-x-T6C-K 2SD882-x-TM3-T 2SD882L-x-TM3-T 2SD882-x-TN3-R 2SD882L-x-TN3-R 2SD882-x-TN3-T 2SD882L-x-TN3-T 2SD882-x-T9N-B 2SD882L-x-T9N-B 2SD882-x-T9N-K 2SD882L-x-T9N-K Package TO-126 TO-126C TO-251... |
 STMicroelectronics |
NPN medium power transistor The device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772. 1 2 3 SOT-32 (TO-126) Figure 1. Internal schematic diagram Table 1. Device summary Order code 2SD882 Marking D882 Package SOT-32 Packing Tube October 2007 Rev 3 1/8 www.st.com 8 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum rating Symbol Parameter VCBO VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipati... |
 OuCan |
NPN Transistor SOT-89-3L Plastic-Encapsulate Transistors D882H TRANSISTOR (NPN) FEATURE Low VCE(sat) Large current capacity MAKING: D882H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Value 70 60 6 3 500 250 150 -55～+150 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakd... |
 JCET |
NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) TO-252-2L FEATURES Power Dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 30 5 3 1.25 150 -55-150 Unit V V V A W ℃ ℃ 1. BASE 2. COLLECTOR 3 .EMITTER ELECTRICAL CHARACTERISTICS ( Ta=25℃ unless otherwise specified ) Parameter Symbol Test conditions Min Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base b... |
 SHENZHENPENGAI |
NPN Transistor SHENZHENPENGAI SEMICONDUCTOR CO.LTD D882M ： 、、。 ： 、、。 ： TO-126 TEL:0755-27656829 FAX:0755-23443106 NPN （TC=25℃） - - - （TC=25℃） - - - - - - - BVce0 BVcb0 BVeb0 Icm Pcm Tj Tstg ≥40 ≥30 ≥6 3 35 150 -55~150 V V V A W ℃ ℃ BVce0 BVcb0 BVeb0 Ice0 Icb0 Ieb0 Hfe Vcesat fT IC=1mA IB... |
 Comchip |
General Purpose Transistors General Purpose Transistors D882M-G RoHS Device Features - Power Dissipation - High collector current. - High current gain. - Low collector-emitter saturation voltage. Diagram - 1. BASE - 2. COLLECTOR - 3. EMITTER 2 C 1 B E 3 Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Collector power dissipation Junction temperature range VCBO VCEO VEBO IC PC TJ 40 V 30 V 6V 3A 1.25 W 150 °C Storage temperature range TSTG -55 to +150 °C TO-252-2L 0.264(6.70) 0.256(6.50) 0.215(5.46) 0.202(5.13) 0.409(10.40) 0.386( 9.80) 0.055(1.40) Φ 0.031(0.80) 0.051(1.30) 0.0... |
NEC |
NPN SILICON POWER TRANSISTOR The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. FEATURES • Low saturation voltage VCE(sat) = 0.5 V MAX. (IC = −2 A, IB = 0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. 3.8 ±0.2 12.0 MAX. PACKAGE DRAWING (Unit: mm) 8.5 MAX. 3.2 ±0.2 2.8 MAX. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature −55 to +150°C 150°C Maximum Maximum Power Dissipations Total Power Dissipation (... |
 Jingdao |
Bipolar Junction Transistor R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. D882PC Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Charger、Emergency lamp and Electric toy control circuit 2．FEATURES Features of good high temperature High switching speed 3．PACKAGE TO-251 4．Electrical Characteristics 4.1 Absolute Maximum Ratings Tamb= 25℃ unless specified PARAMETER Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 1 Emitter(E) 2 Collector(C) 3 Base(B) SYMBOL VCBO VCEO VEBO IC Ptot Tj Tstg VALUE 40 30 6 3 1.1 10 150 -55～150 UNIT V V V A W ℃ ℃ 4.2 Electrical Parameter... |