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| Datasheet |
 D2005 Datasheet - 111.17KB |
| Part Number | Description |
|---|---|
 STMicroelectronics |
Memory Micromodules Memory Cards consist of two main parts: the plastic card, and the embedded Micromodule (which, in turn, carries the silicon chip). The plastic card is made of PVC, ABS or similar material, and can be over-printed with graphics, text, and magnetic strips. The Micromodule is embedded in a cavity in the plastic card. The Micromodules are mounted on Super 35 mm metallized epoxy tape, and are delivered on reels. These contain all of the chips from a number of wafers, including those chips that were found to be non-functioning during testing. Traceability is ensured by a label fixed on the reel. D22 C30 C20 Table 1. Memory Card and Memory Tag Integrated Circuits Module D10 D15 D20 D22 C30 C20 ... |
 uPD |
SIP DC/DC Converters www.DataSheet4U.com D200 Series Single & Dual Output Miniature, 2W SIP DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input Key Features: Parameter Conditions Min. Typ. Max. 5.5 13.2 26.4 52.8 0.3 Units ● 2W Output Power ● Miniature SIP Case Input Voltage Range ● Single & Dual Outputs ● 1,000 VDC Isolation Input Filter ● >2 MHour MTBF Reverse Polarity Input Current Output ● 28 Standard Models ● Industry Standard Pin-Out Parameter Output Voltage Accuracy Output Voltage Balance Line Regulation Load Regulation Ripple & Noise (20 MHz) Output Po... |
 Seme LAB |
METAL GATE RF SILICON FET TetraFET D2001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C 2 1 A 3 F (2 pls) H J N (typ) B D (2 pls) MI PIN 1 PIN 3 SOURCE GATE E KG DP PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45° Tol. Inches Tol. 0.25 0.650 0.010 0.13 0.250 0.005 5° 45° 5° 0.13 0.130 0.005 0.08 0.745 0.003 0.13 0.060 0.005 0.13 0.085 0.005 0.08 0.560 0.003 0.13 0.060 0.005 0.13 0.250 0.005 0.03 0.005 0.001 0.51 0.200 0.020 0.13 0.050 x 45° 0.005 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD ... |
 Shaoxing Silicore Technology |
Stereo Headphone Amplifier wThe D2002 is developed for play-back stereo wwheadphone equipment 3V use). Silicore 3V USE D2002 Outline Drawing It is built in dual auto-reverse preamplifier, mdual OCL power amplifier, and a ripple filter. .coFEATURE Power amplifier stage Uz OCL (Output Condenser-Less). t4z Low noise : Vno=22µVrms (Typ.) z Excellent ripple rejection ratio :RR=62dB e(Typ.) ez Voltage gain : Gv=27dB (Typ.) hz Built-in a power amplifier mute. Sz Built-in input capacitor for reducing buzz noise. taPreamplifier stage z Auto-reverse with F/R control switch. az Input coupling condenser-less .Dz Low noise : Vni=1.3µVrms (Typ.) z Built-in a preamplifier mute. wz Built-in input capacitor for reducing buzz noise. ... |
Seme LAB |
METAL GATE RF SILICON FET TetraFET D2002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C 2 1 A 3 F (2 pls) H J N (typ) B D (2 pls) MI PIN 1 PIN 3 SOURCE GATE E KG DP PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45° Tol. Inches Tol. 0.25 0.650 0.010 0.13 0.250 0.005 5° 45° 5° 0.13 0.130 0.005 0.08 0.745 0.003 0.13 0.060 0.005 0.13 0.085 0.005 0.08 0.560 0.003 0.13 0.060 0.005 0.13 0.250 0.005 0.03 0.005 0.001 0.51 0.200 0.020 0.13 0.050 x 45° 0.005 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BA... |
Seme LAB |
METAL GATE RF SILICON FET TetraFET D2003UK MECHANICAL DATA AD B H C 23 G 1 E 54 F ROHS COMPLIANT METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL I PIN 1 PIN 3 PIN 5 NM O DQ SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 JK DRAIN 1 GATE 2 DIM mm A 16.38 B 1.52 C 45° D 6.35 E 3.30 F 14.22 G 1.27 x 45° H 1.52 I 6.35 J 0.13 K 2.16 M 1.52 N 5.08 O 18.90 Tol. 0.26 0.13 5° 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.13 0.13 MAX 0.13 Inches 0.645 0.060 45° 0.250 0.130 0.560 0.05 x 45° 0.060 0.250 0.005 0.085 0.060 0.200 0.744 Tol. 0.010 0.005 5° 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.005 0.005 MAX 0.005 FEATURES • SIMPLIFIED AMPL... |
Seme LAB |
METAL GATE RF SILICON FET TetraFET D2004UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45° 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5° 0.76 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.065R 45° 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5° 0.03 0.005 0.005 0.005 0.010 0.005... |
Seme LAB |
METAL GATE RF SILICON FET TetraFET D2005UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45° Tol. 0.25 0.13 5° 0.13 0.08 0.13 0.13 0.08 0.13 0.13 0.03 0.51 0.13 Inches 0.650 0.250 45° 0.130 0.745 0.060 0.085 0.560 0.060 0.250 0.005 0.200 0.050 x 45° Tol. 0.010 0.005 5° 0.005 0.003 0.005 0.005 0.003 0.005 0.005 0.001 0.020 0.0... |
Seme LAB |
METAL GATE RF SILICON FET TetraFET D2006UK METAL GATE RF SILICON FET MECHANICAL DATA B (2 pls) E A C 2 3 1 5 4 G (4 pls) F O K D PIN 1 PIN 3 PIN 5 H J I DK SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 MN DRAIN 1 GATE 2 DIM mm A 6.45 B 1.65R C 45° D 16.51 E 6.47 F 18.41 G 1.52 H 4.82 I 24.76 J 1.52 K 0.81R M 0.13 N 2.16 Tol. Inches Tol. 0.13 0.254 0.005 0.13 0.065R 0.005 5° 45° 5° 0.76 0.650 0.03 0.13 0.255 0.005 0.13 0.725 0.005 0.13 0.060 0.005 0.25 0.190 0.010 0.13 0.975 0.005 0.13 0.060 0.005 0.13 0.032R 0.005 0.02 0.005 0.001 0.13 0.085 0.005 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 15W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DES... |
Seme LAB |
METAL GATE RF SILICON FET TetraFET D2007UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 4 M 2 D 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED G HK PIN 1 PIN 3 SOURCE SOURCE IJ DA PIN 2 DRAIN PIN 4 GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.125 DIA 0.225 0.375 0.260 0.005 0.170 0.100 0.800 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW ... |
Seme LAB |
METAL GATE RF SILICON FET TetraFET D2008UK METAL GATE RF SILICON FET MECHANICAL DATA 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 5.08 (0.200) typ. 2 13 2.54 (0.100) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM 45˚ TO-39 PACKAGE PIN1 – DRAIN PIN2 – GATE PIN3 – SOURCE APPLICATIONS • VHF COMMUNICATIONS from DC to 400MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless other... |
 ROHM |
NPN Transistor ... |
Seme LAB |
METAL GATE RF SILICON FET TetraFET D2009UK MECHANICAL DATA AD B H C 23 G 1 E 54 F ROHS COMPLIANT METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL I PIN 1 PIN 3 PIN 5 NM O DQ SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 JK DRAIN 1 GATE 2 DIM mm A 16.38 B 1.52 C 45° D 6.35 E 3.30 F 14.22 G 1.27 x 45° H 1.52 I 6.35 J 0.13 K 2.16 M 1.52 N 5.08 O 18.90 Tol. 0.26 0.13 5° 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.13 0.13 MAX 0.13 Inches 0.645 0.060 45° 0.250 0.130 0.560 0.05 x 45° 0.060 0.250 0.005 0.085 0.060 0.200 0.744 Tol. 0.010 0.005 5° 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.005 0.005 MAX 0.005 FEATURES • SIMPLIFIED AMP... |
 Shindengen Electric Mfg.Co.Ltd |
Super Fast Recovery Rectifiers(400V 200A) SHINDENGEN Super Fast Recovery Rectifiers Modules D200LC40B 400V 200A FEATURES High current capacity trr150ns Insulated Package APPLICATION Semiconductor Production Equipment Big Power Supply Factory Automation, Robot OUTLINE DIMENSIONS Case : MODULES Unit : mm RATINGS Absolute Maximum Ratings (If not specified Tc=25) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each arm Io/2, Tc=52 Peak Surge Forward Current Dielectric Strength Mounting Torque Ratings -40`150 150 400 200 1400 1.5 1.7 Ratings Max.1.3 Max.50 Unit V A A kV N¥m I FSM 50Hz sine wa... |
Seme LAB |
METAL GATE RF SILICON FET TetraFET D2010UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 14.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45° Tol. 0.25 0.13 5° 0.13 0.08 0.13 0.13 0.08 0.13 0.13 0.03 0.51 0.13 Inches 0.650 0.250 45° 0.130 0.745 0.060 0.085 0.560 0.060 0.250 0.005 0.200 0.050 x 45° Tol. 0.010 0.005 5° 0.005 0.003 0.005 0.005 0.003 0.005 0.005 0.001 0.020 0.00... |
Seme LAB |
METAL GATE RF SILICON FET TetraFET D2011UK METAL GATE RF SILICON FET MECHANICAL DATA C D B E 8 1 7 6 3 4 2 A F 5 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES I P H G DBC1 Package PIN 1 Source PIN 2 Drain PIN 3 Drain PIN 4 Source DIM A B C D E F G H I J K L M N O P Q mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13 PIN 5 Source PIN 6 Gate PIN 7 Gate PIN 8 Source Tol. 0.08 0.08 5° 0.08 0.08 0.08 0.13 0.08 0.08 0.02 0.02 0.02 0.08 0.08 0.08 0.51 max Inches .255 .030 45° .030 .045 .105 .462 .332 .312 .008 .025 .012 .128 .083 .250SQ .065 .005 Tol. .003 .003 5° .003 .003 .003 .005 .003 .003 .001 .001 .001 .003 .003 .0... |